# Integrated Microelectronic Devices

L1 | 6.720 overview; fundamental concepts (PDF 1) (PDF 2) |

L2 | Intrinsic, extrinsic semiconductors; conduction and valence band density of states (DOS) (PDF) |

L3 | Carrier statistics in semiconductors; Fermi level (PDF) |

L4 | Generation and recombination mechanisms; equilibrium rates (PDF) |

L5 | Generation and recombination rates outside equilibrium (PDF) |

L6 | Carrier dynamics; thermal motion (PDF) |

L7 | Drift; diffusion; transit time (PDF) |

L8 | Non-uniform doping distribution (PDF) |

L9 | Quasi-Fermi levels; continuity equations (PDF) |

L10 | Shockley equations; majority-carrier type situations (PDF) |

L11 | Minority-carrier type situations: statics (PDF) |

L12 | Minority-carrier dynamics; space-charge and high resistivity (SCR) transport; carrier multiplication (PDF) |

L13 | PN junction: electrostatics in and out of equilibrium (PDF) |

L14 | PN junction: depletion capacitance; current-voltage (I-V) characteristics (PDF) |

L15 | PN junction: carrier storage; diffusion capacitance; PN diode: parasitics (PDF) |

L16 | PN junction dynamics; PN diode: non-ideal and second-order effects (PDF) |

L17 | Metal-semiconductor junction electrostatics in and out of equilibrium; capacitance-voltage (C-V) characteristics (PDF) |

L18 | Metal semiconductor junction I-V characteristics (PDF) |

L19 | Schottky diode; equivalent-circuit model; ohmic contacts (PDF) |

L20 | Ideal semiconductor surface (PDF) |

L21 | Metal-oxide-semiconductor (MOS) in equilibrium (PDF) |

L22 | MOS outside equilibrium; Poisson-Boltzmann formulation (PDF) |

L23 | Simplifications to Poisson-Boltzmann formulation (PDF) |

L24 | Dynamics of MOS structure: C-V characteristics; three-terminal MOS (PDF) |

L25 | Inversion layer transport (PDF) |

L26 | Long-channel metal-oxide-semiconductor field-effect (MOSFET): I-V characteristics (PDF - 1.1 MB) |

L27 | I-V characteristics (cont.): body effect, back bias (PDF) |

L28 | I-V characteristics (cont.): channel-length modulation, sub threshold regime (PDF) |

L29 | C-V characteristics; small-signal equivalent circuit models (PDF) |

L30 | Short-channel MOSFET: short-channel effects (PDF) |

L31 | MOSFET short-channel effects (cont.) (PDF) |

L32 | MOSFET scaling (PDF) |

L33 | Evolution of MOSFET design (PDF) |

L34 | Bipolar junction transistor (BJT) intro; basic operation (PDF) |

L35 | BJT I-V characteristics in forward-active (PDF) |

L36 | Other regimes of operation of BJT (PDF) |

L37 | BJT C-V characteristics; small-signal equivalent circuit models (PDF) |

L38 | BJT high-frequency characteristics (PDF) |

L39 | BJT non-ideal effects; evolution of BJT design; bipolar issues in complementary metal-oxide-semiconductor (CMOS) (PDF) |