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Integrated Microelectronic Devices

   Added On :  07.10.2015 12:29 pm
   Author :  Prof. Jesus del Alamo
   For :  Electronic , Electrical
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Lecture Notes on Integrated Microelectronic Devices by Prof. Jesus del Alamo, MIT


Integrated Microelectronic Devices


L16.720 overview; fundamental concepts (PDF 1) (PDF 2)
L2Intrinsic, extrinsic semiconductors; conduction and valence band density of states (DOS) (PDF)
L3Carrier statistics in semiconductors; Fermi level (PDF)
L4Generation and recombination mechanisms; equilibrium rates (PDF)
L5Generation and recombination rates outside equilibrium (PDF)
L6Carrier dynamics; thermal motion (PDF)
L7Drift; diffusion; transit time (PDF)
L8Non-uniform doping distribution (PDF)
L9Quasi-Fermi levels; continuity equations (PDF)
L10Shockley equations; majority-carrier type situations (PDF)
L11Minority-carrier type situations: statics (PDF)
L12Minority-carrier dynamics; space-charge and high resistivity (SCR) transport; carrier multiplication (PDF)
L13PN junction: electrostatics in and out of equilibrium (PDF)
L14PN junction: depletion capacitance; current-voltage (I-V) characteristics (PDF)
L15PN junction: carrier storage; diffusion capacitance; PN diode: parasitics (PDF)
L16PN junction dynamics; PN diode: non-ideal and second-order effects (PDF)
L17Metal-semiconductor junction electrostatics in and out of equilibrium; capacitance-voltage (C-V) characteristics (PDF)
L18Metal semiconductor junction I-V characteristics (PDF)
L19Schottky diode; equivalent-circuit model; ohmic contacts (PDF)
L20Ideal semiconductor surface (PDF)
L21Metal-oxide-semiconductor (MOS) in equilibrium (PDF)
L22MOS outside equilibrium; Poisson-Boltzmann formulation (PDF)
L23Simplifications to Poisson-Boltzmann formulation (PDF)
L24Dynamics of MOS structure: C-V characteristics; three-terminal MOS (PDF)
L25Inversion layer transport (PDF)
L26Long-channel metal-oxide-semiconductor field-effect (MOSFET): I-V characteristics (PDF - 1.1 MB)
L27I-V characteristics (cont.): body effect, back bias (PDF)
L28I-V characteristics (cont.): channel-length modulation, sub threshold regime (PDF)
L29C-V characteristics; small-signal equivalent circuit models (PDF)
L30Short-channel MOSFET: short-channel effects (PDF)
L31MOSFET short-channel effects (cont.) (PDF)
L32MOSFET scaling (PDF)
L33Evolution of MOSFET design (PDF)
L34Bipolar junction transistor (BJT) intro; basic operation (PDF)
L35BJT I-V characteristics in forward-active (PDF)
L36Other regimes of operation of BJT (PDF)
L37BJT C-V characteristics; small-signal equivalent circuit models (PDF)
L38BJT high-frequency characteristics (PDF)
L39BJT non-ideal effects; evolution of BJT design; bipolar issues in complementary metal-oxide-semiconductor (CMOS) (PDF)


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